- 離子源
- source: n. 1.源頭，水源，源泉。 2.根源，本源；來源。 3 ...
- ion: n. 【物理學(xué)】離子。 positive [negati ...
- ion source: 離子源
- ion bombardment ion source: 離子轟擊離子源
- capillary arc ion source: 毛細弧光離子源
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source ion中文什么意思
- 離子源
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例句與用法
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- Implantation homogeneity study on type - 100 mevva source ion implantor
源注入機注入均勻性研究 - Study of nd silicides synthesis by mevva source ion implantation
源離子注入合成釹硅化物的研究 - Effect of the auxiliary electrode radius in a vacant circular pipe on ion dose in plasma source ion implantation
附加電極半徑對空心圓管端點附近離子注入劑量的影響 - Diamond - like carbon gradient film on ti6a14v alloy substrate have been prepared by means of plasma source ion implanted - ion beam enhanced deposition ( psii - ibed ) . for potential applications as artificial joint materials and artificial cardiac valve materials , its trobological performance and hemocompatibility has also been evaluated in the present ph . d . thesis
本研究采用等離子源離子注入?離子束增強沉積技術(shù)( psii - ibed )制備了鈦合金基類金剛石梯度薄膜材料，對類金剛石梯度薄膜這一新型人工關(guān)節(jié)材料和人工心臟瓣膜材料的生物摩擦學(xué)性能和血液相容性進行了研究和評價，研究了摩擦磨損對材料血液相容性的影響。 - The results were summarized as follows : ( 1 ) diamond - like carbon films could be fabricated by plasma source ion implantation ; it was found that different parameters such as the negative voltage , frequency , gas flux influenced sp3 bond ratio of dlcs , the paper described the effect in details and showed that diamond - like carbon films with increasing negative voltage , reducing frequency , appropriate gas flux got high proportion of sp3 bond ; dlcs prepared by psii contained a good deal of sic , the composition affected its properties ( such as the films hardness ) ; psii method could offer good adhesion to dlcs , but it caused the surface morphology to become asperity
研究結(jié)果表明： ( 1 )用全方位離子注入技術(shù)能夠制備出類金剛石膜。在全方位離子注入技術(shù)中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發(fā)現(xiàn)偏壓增加、頻率降低和適中的氣體流量可以制備出含sp ~ 3鍵較多的類金剛石膜；同時發(fā)現(xiàn)用全方位離子注入技術(shù)制備的類金剛石膜含有大量的sic成份，這對薄膜的性能(例如硬度)影響很大；用全方位離子注入制備的薄膜其結(jié)合力得到增強，但薄膜的表面形貌差。